The next-generation 1200 V, 25/40/80 mOhm SiC MOSFET devices and die as well as its next-generation 1200 V and 700 V SiC SBD devices offer customers attractive benefits in comparison to competing Si/SiC diode/MOSFET and IGBT solutions, including more efficient switching at higher switching frequencies as well as higher avalanche/UIS rating and higher short-circuit withstand rating for rugged and reliable operation. For example, SiC MOSFETs are developed with an ideal balance of specific on-resistance, low gate and thermal resistances, and low gate threshold voltage and capacitance for reliable operation. Designed for high yield processes and low parameter variation across temperature, they operate at higher efficiency (in comparison to Si and IGBT solutions) across high junction temperature (175 degrees Celsius) to extend battery systems like those in HEV/EV applications.
The new devices also offer excellent gate integrity and high gate yield as verified through high temperature reverse bias (HTRB) and time-dependent dielectric breakdown (TBBD) tests, which are part of its AEC-Q101 qualification in progress.
Key Specifications:
Features:
• High UIS capability, offering 1.5x to 2x higher than competitive SiC MOSFETs and GaN devices for avalanche ruggedness
• High short-circuit rating ranging from 1.5x to 5x higher than competitor SiC MOSFET devices for more rugged operation
• Up to 10x lower failure-in-time (FIT) rate than comparable Si IGBTs at rated voltage for neutron susceptibility and with comparable performance against SiC competition pertaining to neutron irradiation
• Higher SiC power density versus Si, enabling smaller magnetics/transformers/DC bus capacitors and less cooling elements for more compact form factor to lower overall system costs
