W�rth Elektronik expands transformer series for SiC MOSFET gate drivers

Ultra Low Interwinding Capacitance

Waldenburg (Germany), October 26, 2023 � W�rth Elektronik presents new additions to the WE-AGDT series, with interwinding capacitance lower than 1 picofarad, more topologies and higher output voltage options. All transformers use the same compact SMT EP7 package with 11.3 x 10.95 x 11.94mm dimensions.

The WE-AGDT series is an Auxiliary Gate Drive Transformer series for up to 6�W isolated auxiliary supplies targeting gate drivers systems for SiC-MOSFETs and IGBTs. In these designs, the most crucial aspect is the transformer interwinding capacitance due to the high dV/dt, which is common in designs utilizing Wide-Bandgap Devices. The new additions to this series feature interwinding capacitance is as low as 0.68 pF and output voltages as high as 30 V. Options now include LLC, Half-Bridge, or Flyback topologies and one or two outputs which can be used in either unipolar or bipolar applications.

WE-AGDT complies with the IEC62368-1/IEC61558-2-16 safety standard and is AEC-Q200 qualified. The transformers are suitable for use in industrial drives, AC motor inverters, HEV/EV charging stations, solar inverters, uninterruptible power supply devices and active power factor correction.

Like all products in the Electronic Components 2022/2023 catalog, WE-AGDT samples are available ex-stock without minimum order quantities (MOQ). Free samples are also provided.

Reference designs are available together with PCB fabrication and layout design files:

Example Flyback topology reference designs:

RD001: 6 W Bipolar isolated auxiliary supply for SiC-MOSFET and IGBT gate driver (PDF)

RD002: 6 W Unipolar isolated auxiliary supply for SiC-MOSFET and IGBT gate driver (PDF)

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Example LLC topology reference design:

Bias Supply Design for Isolated Gate Driver Using UCC25800-Q1 Open-Loop LLC Transformer Driver