Microchip’s 700 V SiC MOSFETs and 700 V and 1200 V SiC Schottky Barrier Diodes (SBDs) join its existing portfolio of SiC power modules. The more than 35 discrete products that Microchip has added to its portfolio are available in volume, supported by comprehensive development services, tools and reference designs, and offer outstanding ruggedness proven through rigorous testing. Microchip now offers a broad family of SiC die, discretes and power modules across a range of voltage, current ratings and package types.
Key Specifications:
SiC Benefits:
Next Generation SiC Schottky Barrier Diodes
• Improved system efficiency, lower forward voltage, and higher switching frequency vs. silicon diodes
• Exhibits essentially zero forward and reverse recovery losses vs. silicon diodes which have higher losses over temperature
• Extreme robustness with no change in parameters even after 1,000 back-to-back surge hits
• High unclamped inductive switching (UIS) capability
• High repetitive UIS (R-UIS) capability with no degradation after more than 10 K hits at rated current
• AEC-Q101 qualification for added reliability and ruggedness
Next Generation SiC MOSFETs
• Higher SiC power density and switching frequency vs. silicon enables smaller magnetics, transformers, and cooling elements for compact form factor (lowers system cost)
• Low RDS(on) across temperature (175 degrees Celsius) leads to lower switching losses operating temperature range
• High UIS capability
• High R-UIS capability with no lifetime gate oxide degradation even after 100 K cycles
• Longest short circuit withstand rating to protect circuit design
• AEC-Q101 qualification for added reliability and ruggedness
SiC Power Modules Including SP6LI
• Design expertise
• High power density
• Low profile packages including low inductance SP6LI
• Extended temperature capabilities
• Pin locating flexibility
• Mix of silicon/silicon carbide diode and MOSFET die
