The 40 mOhm MSC040SMA120B MOSFET is highly avalanche-rated for industrial, automotive and commercial aviation power applications, and offers a high short circuit withstand rating for robust operation. Additional members of the product family will be released in the coming months, including commercially and AEC-Q101 qualified 700 V and 1200 V SiC MOSFET solutions to address a wide range of power applications.
Key Specifications:
Next Generation SiC MOSFET Features:
• Low capacitances and low gate charge
• Fast switching speed due to low internal gage resistance (ESR)
• Stable operation at high junction temperature at 175 degrees Celsius
• Fast and reliable body diode
• Superior avalanche ruggedness
• AEC-Q101 qualification
SiC Diode Features:
• Ultra-fast recovery times
• Soft recovery characteristics
• Low forward voltage
• Low leakage current
• Avalanche energy rated
• Essentially zero forward and reverse recovery = reduced switch and diode switching losses
• AEC-Q101 qualified with usable 175 degrees Celsius junction temperature