Microchip’s 700 V SiC MOSFETs and 700 V and 1200 V SiC Schottky Barrier Diodes (SBDs) join its existing portfolio of SiC power modules. The more than 35 discrete products that Microchip has added to its portfolio are available in volume, supported by comprehensive development services, tools and reference designs, and offer outstanding ruggedness proven
1200 V SiC MOSFET and 700 V Schottky Barrier Diode Devices
The next-generation 1200 V, 25/40/80 mOhm SiC MOSFET devices and die as well as its next-generation 1200 V and 700 V SiC SBD devices offer customers attractive benefits in comparison to competing Si/SiC diode/MOSFET and IGBT solutions, including more efficient switching at higher switching frequencies as well as higher avalanche/UIS rating and higher short-circuit withstand