The next-generation 1200 V, 25/40/80 mOhm SiC MOSFET devices and die as well as its next-generation 1200 V and 700 V SiC SBD devices offer customers attractive benefits in comparison to competing Si/SiC diode/MOSFET and IGBT solutions, including more efficient switching at higher switching frequencies as well as higher avalanche/UIS rating and higher short-circuit withstand