The next-generation 1200 V, 25/40/80 mOhm SiC MOSFET devices and die as well as its next-generation 1200 V and 700 V SiC SBD devices offer customers attractive benefits in comparison to competing Si/SiC diode/MOSFET and IGBT solutions, including more efficient switching at higher switching frequencies as well as higher avalanche/UIS rating and higher short-circuit withstand
Extremely Low Inductance SP6LI Package
Extremely low inductance package dedicated to high current, low specific on-resistance (RDSon) Silicon Carbide (SiC) MOSFET power modules. The new package, developed specifically for the SP6LI product family, is designed to offer 2.9 nanohenry (nH) stray inductance suitable for SiC MOSFET technology and enable high current, high switching frequency as well as high efficiency. Silicon