With the fast switching transients of GaN, seemingly small parasitic components can have a large impact on system performance. An insulated thermal interface, normally excluded from device characterization, adds a parasitic capacitance and leads to a noticeable increase in device current during turn-on. Straight-forward analytic solutions allow quick design of thermal interfaces using industry-standard insulated metal substrates. The impact of various sized interfaces on switching performance is shown with a double-pulse setup.
Pelle Weiler, TU Eindhoven
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