The Mitsubishi LV100-type T-series 2.0kV IGBT Module will reduce size and power consumption of DC1500V converters including renewable-energy types.
Mitsubishi Electric Corporation announced that it will begin shipping samples of its LV100-type T-series 2.0kV insulated-gate bipolar transistor (IGBT) Module for industrial use this May. The new power-semiconductor product is expected to downsize and reduce the power consumption of power-conversion equipment for use with renewable-energy sources. Also, the product will be exhibited at major trade shows, including Power Conversion Intelligent Motion (PCIM) Europe 2022 in Nuremberg, Germany from May 10 to 12.
Product Features:
1) IGBT module with 2.0kV withstand voltage will downsize DC1500V power converters
– The new 2.0kV-rated IGBT simplifies the design of DC1500V-rated power converters, including for renewable-energy power sources, which are difficult to design using conventional 1.7kV-rated IGBTs.
2) 7th-generation IGBT and RFC diode reduce power loss in power converters
– Latest (seventh-generation) IGBT with CSTBTTM3 structure and RFC diode optimized for high withstand voltage are suitable for high-voltage, lower-power-loss applications.
3) Industrial LV100-type package will increase capacity of power-conversion systems
– The terminal layout is optimized for easy paralleling and flexible inverter configurations and capacities.
– Three AC main terminals help to spread and equalize current density for increased inverter capacity.
– Integrating the structure’s insulated and copper-base parts and optimizing the internal electrode structure increases thermal cycle life4 and lowers package inductance for enhanced reliability.
Datasheet is available in this link.
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